ABSTRACT

An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source.

Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology.

Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.

chapter 1|12 pages

1 The Big Picture

chapter 1|13 pages

2A Brief History of the Field

chapter 2|15 pages

1 Overview

chapter 2|12 pages

2 Strained SiGe and Si Epitaxy

chapter 2|39 pages

3 Si–SiGe(C) Epitaxy by RTCVD

chapter 2|10 pages

4 MBE Growth Techniques

chapter 2|11 pages

5 UHV/CVD Growth Techniques

chapter 2|15 pages

7 Stability Constraints in SiGe Epitaxy

chapter 2|13 pages

9 Carbon Doping of SiGe

chapter 3|4 pages

1 Overview

chapter 3|17 pages

2 Device Structures and BiCMOS Integration

chapter 3|15 pages

3 SiGe HBTs on CMOS-Compatible SOI

chapter 3|15 pages

4 Passive Components

chapter 4|4 pages

1 Overview

chapter 4|19 pages

2 Device Physics

chapter 4|16 pages

3 Second-Order Effects

chapter 4|12 pages

4 Low-Frequency Noise

chapter 4|19 pages

5 Broadband Noise

chapter 4|15 pages

6 Microscopic Noise Simulation

chapter 4|13 pages

7 Linearity

chapter 4|8 pages

8 pnp SiGe HBTs

chapter 4|14 pages

9 Temperature Effects

chapter 4|13 pages

1 Radiation Effects

chapter 4|14 pages

11 Reliability Issues

chapter 4|13 pages

12 Self-Heating and Thermal Effects

chapter 4|17 pages

13 Device-Level Simulation

chapter 4|12 pages

14 SiGe HBT Performance Limits

chapter 5|3 pages

1 Overview

chapter 5|14 pages

2 Biaxial Strained Si CMOS

chapter 5|13 pages

3 Uniaxial Stressed Si MOSFET

chapter 5|13 pages

4 SiGe-Channel HFETs

part 6|2 pages

1 Overview

part 7|2 pages

1 Overview

chapter 7|11 pages

2 Si–SiGe LEDs

chapter 7|20 pages

3 Near-Infrared Detectors

chapter 7|13 pages

5 Si–SiGe Quantum Cascade Emitters

part 8|2 pages

1 Overview

chapter 8|12 pages

2 Best-Practice AC Measurement Techniques

chapter 8|17 pages

4 Compact Modeling of SiGe HBTs

chapter 8|21 pages

5 Compact Modeling of SiGe HBTs

chapter 8|12 pages

6 CAD Tools and Design Kits

chapter 8|12 pages

8 Transmission Lines on Si

chapter 8|13 pages

9 Improved De-Embedding Techniques

chapter 9|3 pages

1 Overview

chapter 9|14 pages

3 LNA Optimization Strategies

chapter 9|42 pages

4 Linearization Techniques

chapter 9|18 pages

5 SiGe MMICs

chapter 9|9 pages

6 SiGe Millimeter-Wave ICs

chapter 9|42 pages

7 Wireless Building Blocks Using SiGe HBTs

chapter 9|23 pages

9 RF MEMS Techniques in Si/SiGe

chapter 9|19 pages

10 Wideband Antennas on Silicon

chapter 9|8 pages

11 Packaging Issues for SiGe Circuits