ABSTRACT

The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of st

chapter 1|31 pages

INTRODUCTION

chapter 2|41 pages

FILM GROWTH AND MATERIAL PARAMETERS

chapter 3|31 pages

PRINCIPLE OF SIGE HBTS

chapter 4|48 pages

DESIGN OF SIGE HBTS

chapter 5|44 pages

SIMULATION OF SIGE HBTS

chapter 6|42 pages

STRAINED-SI HETEROSTRUCTURE FETS

chapter 7|34 pages

SIGE HETEROSTRUCTURE FETS

chapter 9|49 pages

SIGE OPTOELECTRONIC DEVICES

chapter 10|38 pages

RF APPLICATIONS OF SIGE HBTS